发明名称 |
SELECTIVE FABRICATION OF HIGH-CAPACITANCE INSULATOR FOR A METAL-OXIDE-METAL CAPACITOR |
摘要 |
<p>Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.</p> |
申请公布号 |
KR20110120363(A) |
申请公布日期 |
2011.11.03 |
申请号 |
KR20117024261 |
申请日期 |
2010.03.16 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
KANG WOO TAG;KIM, JONG HAE;SUH, JUNG WON |
分类号 |
H01L27/108;H01L21/8242;H01L27/04 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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