| 摘要 |
PURPOSE: A semiconductor memory device and a program thereof are provided to separate the channel of a cell in which data is not allowed to be programmed from the channel of a different cell by depleting the junction of a memory cell completely. CONSTITUTION: In a semiconductor memory device and a program thereof, a voltage applied to a 0-th word line is converted into a program voltage(Vpgm). A second pass voltage is applied to first and second word lines(WL1,WL2). A junction area adjacent to the first memory cell(C1) is changed into a depletion region. The channel of 0-th memory cell is isolated from a different channel. |
