NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF

摘要

A nitride-type semiconductor element comprising a p-type AldGaeN layer (25) which has an m surface as the growth surface and an electrode (30) which is arranged on the p-type AldGaeN layer (25), wherein the AldGaeN layer (25) has a p-AldGaeN contact layer (26) which comprises an AlxGayInzN (x+y+z=1, x=0, y>0, z=0) semiconductor having a thickness of 26 to 60 nm inclusive, and wherein the p-AldGaeN contact layer (26) comprises a body region (26A) which contains Mg at a concentration of 4×1019 to 2×1020 cm-3 inclusive and a high concentration region (26B) which is in contact with the electrode (30) and has an Mg concentration of 1×1021 cm-3 or more.