| 摘要 |
<p>PURPOSE: A non-volatile memory apparatus manufacturing method is provided to arrange a polymer layer on the upper surface of a photosensitive pattern, thereby preventing a height loss of a photosensitive film during etching and sliming processes. CONSTITUTION: Stacks(N1-Nn) are repeatedly laminated on a substrate(10). A conductive film(11) and insulating film(12) are laminated on the stack. A photosensitive pattern(13) is arranged on the laminated stack. A capping layer is arranged on the upper part of the photosensitive pattern. The uppermost part of the stack is etched with the capping layer and photosensitive pattern as an etching barrier wall.</p> |
