发明名称 |
SEMICONDUCTOR DEVICES HAVING IMPROVED ADHESION AND METHODS OF FABRICATING THE SAME |
摘要 |
<p>Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed.</p> |
申请公布号 |
WO2011137040(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
WO2011US33562 |
申请日期 |
2011.04.22 |
申请人 |
CREE, INC.;MIECZKOWSKI, VAN;HAGLEITNER, HELMUT |
发明人 |
MIECZKOWSKI, VAN;HAGLEITNER, HELMUT |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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