PROCESS FOR THE PRODUCTION OF A COMPOUND SEMICONDUCTOR LAYER

摘要

Process for the production of a I-III-VI-compo.und semiconductor layer (80), in which a substrate (50) is provided (10, 12) with a coating (63) which has a metallic precursor layer (57), the coating (63) is heated and kept for the duration of a process time at temperatures of at least 350 °C (16) and the metallic precursor layer (57) is thereby converted (16), in the presence of a chalcogen (58; 72), into the compound semiconductor layer (80) while areal contact is provided (14; 24) between a preponderant proportion (15a) of a free surface (15a, 15b; 25) of the coating (63) and a cover (60; 70) during at least part of the process time.