| 摘要 |
Disclosed is a photoelectric conversion device including a transparent conductor layer formed on a light transmissive substrate, an electron blocking layer covering the surface of the transparent conductor layer, a bulk heterojunction type photoelectric conversion layer in contact with the electron blocking layer, a hole blocking layer covering the surface of the photoelectric conversion layer, and a counter electrode covering the hole blocking layer, wherein the hole blocking layer is made of a material having a band gap of 3.0 eV or more, thereby the migration of holes from the photoelectric conversion layer is prevented and recombination or leakage current is suppressed.
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