| 摘要 |
PURPOSE: A semiconductor memory device is provided to perform accurate programming by controlling the duration of a first programming current pulse. CONSTITUTION: A period control signal generating unit(100) generates a period control signal. The period control signal is activated after a first set up time. The first writing control code generator(200) generates a first writing control code. The first writing control code generator activates the first writing control code in response to a period control signal. A second writing control code generator(300) generates a second writing control code. The second writing control code is activated during a predetermined time in response to a programming enable signal. A data writing part(400) outputs a first programming current pulse. The data writing part outputs a second programming current pulse.
|
