APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method and apparatus for manufacturing a semiconductor device are provided to efficiently prevent the moisture absorption of a porous low dielectric layer by depositing a capping layer with an in-situ method. CONSTITUTION: A porous low dielectric layer(130) is formed on a substrate(100). A metal wiring(170) is formed on the substrate with the porous low dielectric layer. UV beams(180) of the wavelength of 260 nm to 450 nm are radiated to the porous low dielectric layer. A capping layer is formed on the substrate with a porous dielectric layer and a metal wiring. The porous low dielectric layer is selected among an SiOH layer, an SiOC layer, and an SiOF layer.