发明名称 |
EMBEDDED MEMORY CELL AND METHOD OF MANUFACTURING SAME |
摘要 |
<p>An embedded memory cell includes a semiconducting substrate (110), a transistor (120) having a source/drain region (121) at least partially embedded in the semiconducting substrate, and a capacitor (130) at least partially embedded in the semiconducting substrate. The capacitor includes a first electrode (131) and a second electrode (132) that are electrically isolated from each other by a first electrically insulating material (133). The first electrode is electrically connected to the semiconducting substrate and the second electrode is electrically connected to the source/drain region of the transistor.</p> |
申请公布号 |
EP2382664(A2) |
申请公布日期 |
2011.11.02 |
申请号 |
EP20090836961 |
申请日期 |
2009.12.17 |
申请人 |
INTEL CORPORATION |
发明人 |
KAVALIEROS, JACK T.;MUKHERJEE, NILOY;DEWEY, GILBERT;SOMASEKHAR, DINESH;DOYLE, BRIAN S. |
分类号 |
H01L27/108;H01L21/8242;H01L29/66;H01L49/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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