发明名称 CMOS Image sensor having a wide linear dynamic range
摘要 <p>The process involves initializing a sense node (SN) and a read node (RN) of a pixel cell, and partially transferring electrical charges (2L, 2M, 2H, 3H, 4M, 4H) accumulated at the sense node to the read node. The electrical charges accumulated at the sense node are partially transferred to the read node. The electrical charges accumulated at the sense node are completely transferred to the read node. A pixel voltage is obtained by performing a measurement of the electrical charges at the read node after completely transferring electrical charges accumulated at the sense node to the read node. An independent claim is also included for an image sensor comprising an analog-digital circuit.</p>
申请公布号 EP2383980(A1) 申请公布日期 2011.11.02
申请号 EP20110156874 申请日期 2011.03.03
申请人 STMICROELECTRONICS SA 发明人 DESCHAMPS, BENOIT
分类号 H04N5/335 主分类号 H04N5/335
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