Process for the fabrication of a threshold acceleration sensor

摘要

A process for the fabrication of an inertial sensor with failure threshold, including the steps of: forming, on top of a substrate (2) of a semiconductor wafer (1), at least one sample element (6) embedded in a sacrificial region (3, 12); forming, on top of the sacrificial region (3, 12), a body (18) connected to the sample element (6); and etching the sacrificial region (3, 12), so as to free the body (18) and the sample element (6).