| 摘要 |
PURPOSE: A three dimensional vertical memory cell string with a shield electrode, a memory array using the same, and a manufacturing method thereof are provided to improve integration by reducing the width of a trench between adjacent cell stacks. CONSTITUTION: Electrode stacks are formed by filling a selectively etched sacrificial semiconductor layer with an insulation layer. A gate insulation layer stack including a charge storage layer(3) is formed on each trench. A semiconductor body(5) is formed on the gate insulation layer stack. A separation insulation layer(6) is formed on each trench and surrounds the semiconductor body. A shield electrode(27) is formed on the separation insulation layer of each trench by depositing conductive materials on the semiconductor substrate and etching the semiconductor substrate. |
