| 发明名称 |
FLASH CELL WITH INTEGRATED HIGH-K DIELECTRIC AND METAL-BASED CONTROL GATE |
| 摘要 |
<p>A semiconductor device is described having an integrated high-k dielectric layer and metal control gate. A method of fabricating the same is described. Embodiments of the semiconductor device include a high-k dielectric layer disposed on a floating gate. The high-k dielectric layer defines a recess. A metal control gate is formed in the recess.</p> |
| 申请公布号 |
EP2382665(A2) |
申请公布日期 |
2011.11.02 |
| 申请号 |
EP20090837038 |
申请日期 |
2009.12.23 |
| 申请人 |
INTEL CORPORATION |
发明人 |
JAN, CHIA-HONG;HAFEZ, WALID, M. |
| 分类号 |
H01L27/115;H01L21/28;H01L21/31;H01L21/8247;H01L29/423;H01L29/788 |
主分类号 |
H01L27/115 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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