METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the properties of a semiconductor device by preventing not-open and SAC(Self-Aligned Contact) defects. CONSTITUTION: A conductive pattern(150) is formed on a semiconductor substrate(100). A contact hole is formed between conductive patterns. The control hole is processed with plasma. A spacer(140) is formed on the conductive pattern sidewall. An interlayer dielectric layer(160) is formed on the surface including the conductive pattern. A contact plug is formed between the conductive patterns.