发明名称 REGENERATIVE GATE DRIVE CIRCUIT FOR A POWER MOSFET
摘要 <p>A regenerative drive circuit for driving the gate of a power MOSFET of a switched mode power converter includes a pair of MOSFETS connected in series with a pair of coupled inductors L 1 , L 2 and L 3 , L 4 which are connected in parallel. A first blocking capacitor is connected in series with inductor L 3 and a second blocking capacitor is connected in series with inductor L 4 . A positive voltage source is provided to one MOSFET and a negative voltage source is provided to the other MOSFET, and the gate drive circuit provides energy recover.</p>
申请公布号 EP2013956(B1) 申请公布日期 2011.11.02
申请号 EP20070809031 申请日期 2007.04.27
申请人 RAYTHEON COMPANY 发明人 JACOBSON, BORIS, S.
分类号 H03K17/0412;H02J1/00;H02J3/00;H02M1/088;H03K17/16 主分类号 H03K17/0412
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