发明名称 |
Driving circuit for memory device |
摘要 |
An electrically programmable non-volatile memory device (100) is proposed. The memory device includes a plurality of memory cells (110) and a driver circuit (115,120) for driving the memory cells (110); the driver circuit includes programming means (120) for providing a first programming voltage (VDs) to the drains and a second programming voltage (VSm) to the sources of a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period (T 1 ) for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means (605) for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period (T 2 ) being required by the second programming voltage to reach a second target value thereof, the two transient periods starting simultaneously.
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申请公布号 |
EP2383747(A1) |
申请公布日期 |
2011.11.02 |
申请号 |
EP20110164292 |
申请日期 |
2011.04.29 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CASTALDO, ENRICO;CONTE, ANTONINO;LO GIUDICE, GIANBATTISTA;RINALDI, STEFANIA |
分类号 |
G11C16/12;G11C16/30 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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