发明名称 MOS capacitor structure with linear capacitance-voltage curve
摘要 A MOS capacitor structure having: €¢ a first series connection of a first offset-voltage source and a first MOS capacitor, the first offset-voltage source providing a first offset voltage to the first MOS capacitor; €¢ a second series connection of a second offset-voltage source and a second MOS capacitor, the second offset-voltage source providing a second offset voltage to the second MOS capacitor. The first and second series connections are connected in parallel such that the first and second MOS capacitors are arranged in an anti-parallel way.
申请公布号 EP2383781(A1) 申请公布日期 2011.11.02
申请号 EP20100160335 申请日期 2010.04.19
申请人 DIALOG SEMICONDUCTOR B.V. 发明人 KRUISKAMP, MARINUS WILHELMUS;HOOGSTRAATE, ANTHONIE JACOBUS;VIDOJKOVIC, VOJKAN
分类号 H01L27/08;H01L29/94 主分类号 H01L27/08
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