| 摘要 |
<p>A multi wavelength semiconductor laser device is configured with a block 103 that is formed having a rectangular projection (301, Figure 5) with three side faces (305, 303, Figure 5). A plurality of laser diodes 111 whose emission wavelengths are different from each other, are mounted on the three side faces of the projection so that their laser beams emit in the predetermined direction. Alternatively, a multi-wavelength laser device comprises a block 103, having first and second side faces 405 and first and second flat faces 401 which intersect the first and second side faces 405 respectively. The laser diodes 111 are mounted on the two faces 405 or more among the first side face 405, the second side face 405 , the first flat face 401 and the second flat face 401 so that their laser beams emit in the same direction.</p> |
