| 摘要 |
PURPOSE: A semiconductor device with a silted well tub is provided to reduce a trigger voltage by including an N-well, a slit, and an N type guard ring. CONSTITUTION: Gate electrodes(51,56) cross an inner first conductive well. Source regions(41,43,45,47) and drain regions(42,44,46) are formed in the inner first conductive well. An outer first conducive well is arranged outside the inner first conductive well. A second conductive well includes at least one slit(33S). A first conductive guard ring is formed in the outer first conductive well.
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