| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a seam in a gap-fill process by widening the upper width of the contact hole or trench than the lower width of the contact hole. CONSTITUTION: An interlayer dielectric layer(202) is formed on a semiconductor substrate(200). A trench(T1) is formed on the interlayer dielectric layer. The upper width(W1) of the trench becomes wider than the lower width(W2) of the trench by a cleaning process. A metal layer is filled in the trench. An interlayer dielectric layer is made of a PE-TEOS layer or SiO2 layer.
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