Semiconductor device with a drain region underlying a gate contact pad

摘要

The present invention relates to a semiconductor device and has an object to enhance a di / dt tolerance and a dV / dt tolerance without increasing an ON resistance.
In order to achieve the object described above, an underpad drain region is provided in an upper main surface of a semiconductor substrate (1) under a gate pad (12), a conductive layer (10) connected to said gate pad (12) being buried in an insulating layer (7) so as to be closer to said upper main surface than said gate pad.