发明名称 |
Verfahren zum Erhalten einer AlN-Schicht mit deutlich vertikalen Flanken |
摘要 |
The method involves depositing an aluminum nitride layer (31) on a topology pattern and a top edge of a step corresponding to one of bottom edges (32-1, 34-2) of a side, which is vertical or perpendicular relative to a surface (2') of a substrate (2). A mask layer is formed over the aluminum nitride layer whose edge is positioned so as to define one of top edges (32-2, 34-2) of the side. The aluminum nitride layer is etched via the mask, in order to obtain the side, where slope of the side is defined by a position of the top and bottom edges in a plane perpendicular to the surface. The mask layer is made of silica, or molybdenum, or platinum or an adhesive resin. An independent claim is also included for a heterogeneous substrate comprising a sub layer forming part of a step-type pattern. |
申请公布号 |
EP2383775(A2) |
申请公布日期 |
2011.11.02 |
申请号 |
EP20110163944 |
申请日期 |
2011.04.27 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
AID, MARC;DEFAY, EMMANUEL;LEFEVRE, AUDE;PARAT, GUY-MICHEL |
分类号 |
H01L21/311;H01L41/22;H01L41/316;H01L41/332 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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