| 摘要 |
PURPOSE: A programming method of a semiconductor memory device is provided to reduce a verification voltage to a target verification voltage gradually by setting the verification voltage higher than a real target verification voltage. CONSTITUTION: In a programming method of a semiconductor memory device, a beginning verification voltage is set as a verification voltage(S601). A program is executed(S603). A program verification is performed(S605). It is confirmed whether a verification result is 100%(S607). It is confirmed whether a passed cell is 25% of a total page(S609). It is confirmed whether the passed cell is over 50% of the total page(S611). The verification voltage is changed to a first verification voltage(S613). The verification voltage is changed to a second verification voltage(S617). |
