发明名称 |
Semiconductor device with increased channel length and method for fabricating the same |
摘要 |
A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is buried into both the trench and the first recess region. An active region is defined by the field oxide layer, having a first active region and a second active region. The latter has a second recess region formed in a lower portion of the active region than the former. A step gate pattern is formed on a border region between the first active region and the second active region. The gate pattern has a step structure whose one side extends to a surface of the first active region and the other side extends to a surface of the second active region. Other embodiments are also described.
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申请公布号 |
US8049262(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20070891904 |
申请日期 |
2007.08.13 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHO JUN-HEE |
分类号 |
H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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