发明名称 Structure and method for forming a capacitively coupled chip-to-chip signaling interface
摘要 A system and method for providing capacitively-coupled signaling in a system-in-package (SiP) device is disclosed. In one embodiment, the system includes a first semiconductor device and an opposing second semiconductor device spaced apart from the first device, a dielectric layer interposed between the first device and the second device, a first conductive pad positioned in the first device, and a second conductive pad positioned in the second device that capacitively communicate signals from the second device to the first device. In another embodiment, a method of forming a SiP device includes forming a first pad on a surface of a first semiconductor device, forming a second pad on a surface of a second semiconductor device, and interposing a dielectric layer between the first semiconductor device and the second semiconductor device that separates the first conductive signal pad and the second conductive signal pad.
申请公布号 US8049331(B2) 申请公布日期 2011.11.01
申请号 US20100841846 申请日期 2010.07.22
申请人 MICRON TECHNOLOGY, INC. 发明人 NEAVES PHILIP
分类号 H01L23/485;H01L21/60;H01L23/48;H01L23/50;H01L23/522;H01L25/065 主分类号 H01L23/485
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