发明名称 Substrate processing apparatus and reaction container
摘要 A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
申请公布号 US8047158(B2) 申请公布日期 2011.11.01
申请号 US20070933169 申请日期 2007.10.31
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 KONTANI TADASHI;TOYODA KAZUYUKI;SATO TAKETOSHI;KAGAYA TORU;SHIMA NOBUHITO;ISHIMARU NOBUO;SAKAI MASANORI;OKUDA KAZUYUKI;YAGI YASUSHI;WATANABE SEIJI;KUNII YASUO
分类号 C23C16/509;C23C16/06;C23C16/22;C23C16/44;C23C16/452;C23C16/455;C23C16/458;C23C16/50;C23C16/503;C23C16/505;C23F1/00;H01J37/32;H01L21/306 主分类号 C23C16/509
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