发明名称 |
Substrate processing apparatus and reaction container |
摘要 |
A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
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申请公布号 |
US8047158(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20070933169 |
申请日期 |
2007.10.31 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KONTANI TADASHI;TOYODA KAZUYUKI;SATO TAKETOSHI;KAGAYA TORU;SHIMA NOBUHITO;ISHIMARU NOBUO;SAKAI MASANORI;OKUDA KAZUYUKI;YAGI YASUSHI;WATANABE SEIJI;KUNII YASUO |
分类号 |
C23C16/509;C23C16/06;C23C16/22;C23C16/44;C23C16/452;C23C16/455;C23C16/458;C23C16/50;C23C16/503;C23C16/505;C23F1/00;H01J37/32;H01L21/306 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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