发明名称 Bottom electrode for memory device and method of forming the same
摘要 Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.
申请公布号 US8049200(B2) 申请公布日期 2011.11.01
申请号 US20100705165 申请日期 2010.02.12
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 H01L47/00 主分类号 H01L47/00
代理机构 代理人
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