| 摘要 |
In the present invention, there is provided a semiconductor device including: element isolation regions formed in a state of being buried in a semiconductor substrate such that an element formation region of the semiconductor substrate is interposed between the element isolation regions; a gate electrode formed on the element formation region with an gate insulating film interposed between the gate electrode and the element formation region, the gate electrode being formed so as to cross the element formation region; and source-drain regions formed in the element formation region on both sides of the gate electrode, wherein a channel region made of the element formation region under the gate electrode is formed so as to project from the element isolation regions, and the source-drain regions are formed to a position deeper than surfaces of the element isolation regions.
|
