| 发明名称 |
Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing |
| 摘要 |
A method of making a nonvolatile memory cell includes forming a steering element and forming a carbon resistivity switching material storage element by coating a carbon containing colloid. |
| 申请公布号 |
US8048474(B2) |
申请公布日期 |
2011.11.01 |
| 申请号 |
US20080222341 |
申请日期 |
2008.08.07 |
| 申请人 |
SANDISK 3D LLC |
发明人 |
KUMAR TANMAY;PING ER-XUAN;ILKBAHAR ALPER |
| 分类号 |
B05D5/12;H01L21/20 |
主分类号 |
B05D5/12 |
| 代理机构 |
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