| 摘要 |
The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlxGa1-xN(0≦̸x<1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlxGa1-xN(0≦̸x<1) and AlOyNz on the substrate by recrystallizing the substrate with the AlxGa1-xN(0≦̸x<1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NH3 gas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.
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