发明名称 Level shifter circuit with a thin gate oxide transistor
摘要 A level shifting circuit with a thin gate transistor connected to the input of the output stage is presented. The level shifting circuit has an input stage that receives an input that is at first voltage. A transistor with a thin gate oxide has one terminal connected to the input stage and another terminal coupled to an input of the output stage. The output stage of the level shifting circuit is implemented with thick gate oxide transistors.
申请公布号 US8049532(B1) 申请公布日期 2011.11.01
申请号 US20100823596 申请日期 2010.06.25
申请人 ALTERA CORPORATION 发明人 MAANGAT SIMARDEEP;VAN HO VINH;HOANG TIM TRI
分类号 H03K19/0175;H03L5/00 主分类号 H03K19/0175
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