| 摘要 |
Disclosed herein is a semiconductor device with a deep trench structure for effectively isolating heavily doped wells of neighboring elements from each other at a high operating voltage. The semiconductor device with a deep trench structure includes a semiconductor substrate in which a first conductivity type well and a second conductivity type well having conductivity opposite to that of the first conductivity type well are formed, a gate oxide film and a gate electrode laminated on each of the first conductivity type well and the second conductivity type well, second conductivity type drift regions formed on both sides of the gate electrode formed on the first conductivity type well, first conductivity type drift regions formed on both sides of the gate electrode formed on the second conductivity type well, and a first isolation layer having a trench structure deeper than the first and second conductivity type wells and isolating the first conductivity type well and the second conductivity type well from each other.
|
