发明名称 |
Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating |
摘要 |
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
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申请公布号 |
US8048615(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20060086167 |
申请日期 |
2006.12.01 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
TAKEI SATOSHI;HORIGUCHI YUSUKE;HASHIMOTO KEISUKE;NAKAJIMA MAKOTO |
分类号 |
G03F7/40;G03F7/11;G03F7/38 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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