发明名称 |
Method for forming a split gate device |
摘要 |
A method for forming a semiconductor device includes forming a dielectric layer over a substrate. The method further includes forming a select gate layer over the dielectric layer. The method further includes etching the select gate layer at a first etch rate to form a first portion of a sidewall of a select gate, wherein the step of etching the select gate layer at the first etch rate includes using an oxidizing agent to oxidize at least a top portion of the substrate underlying the dielectric layer to form an oxide layer. The method further includes etching the select gate layer at a second etch rate lower than the first etch rate to form a second portion of the sidewall of the select gate, wherein the step of etching the select gate layer at the second etch rate includes removing only a top portion of the dielectric layer.
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申请公布号 |
US8048738(B1) |
申请公布日期 |
2011.11.01 |
申请号 |
US20100760313 |
申请日期 |
2010.04.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KANG SUNG-TAEG;HONG CHEONG MIN;WINSTEAD BRIAN A. |
分类号 |
H01L21/336;H01L21/461;H01L21/4763 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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