发明名称 |
Non-volatile memory device and method of operation therefor |
摘要 |
In one embodiment, the non-volatile memory device includes a plurality of normal memory cells, and at least one flag memory cell associated with one of the plurality of normal memory cells. A normal page buffer is configured to store data read from one of the plurality of normal memory cells. The normal page buffer includes a main latch storing the read data. A control circuit is configured to selectively change data stored in the main latch during a read operation based on a state of the flag memory cell.
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申请公布号 |
US8050115(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20090461317 |
申请日期 |
2009.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-KU;LEE HEE-WON |
分类号 |
G11C7/00;G11C11/34;G11C16/04 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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