发明名称 Reference voltage generation circuit and bias circuit
摘要 A reference voltage generation circuit comprises: a first depletion mode FET; a second depletion mode FET; a first resistor; a first bipolar transistor; a second resistor; a second bipolar transistor; a third bipolar transistor; a third resistor; a third depletion mode FET having its drain connected to a second end of the first resistor and to the collector of the first bipolar transistor; and a fourth bipolar transistor having its base and collector connected to the gate and the source of the third depletion mode FET, and its emitter grounded, wherein source voltage of the second depletion mode FET is output as a reference voltage.
申请公布号 US8049483(B2) 申请公布日期 2011.11.01
申请号 US20090417730 申请日期 2009.04.03
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 YAMAMOTO KAZUYA;MIYASHITA MIYO
分类号 G05F3/16 主分类号 G05F3/16
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