发明名称 |
Method of manufacturing embedded metal-oxide-nitride-oxide-silicon memory device |
摘要 |
The present disclosure fabricates an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory device. The memory device is stacked with memory layers having a low aspect ratio. The memory device can be easily fabricated with only two extra masks for saving cost. The present disclosure uses a general method for mass-producing TFT and is thus fit for fabricating NAND-type or NOR-type flash memory to be used as embedded memory in a system-on-chip.
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申请公布号 |
US8048747(B1) |
申请公布日期 |
2011.11.01 |
申请号 |
US20100917690 |
申请日期 |
2010.11.02 |
申请人 |
NATIONAL APPLIED RESEARCH LABORATORIES |
发明人 |
CHEN MIN-CHENG;CHEN HOU-YU;LIN CHIA-YI |
分类号 |
H01L21/336;H01L21/8236;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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