发明名称 |
Pad and method for chemical mechanical polishing |
摘要 |
A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer.
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申请公布号 |
US8047899(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20070878654 |
申请日期 |
2007.07.26 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHUN-FU;HUNG YUNG-TAI;SU CHIN-TA;CHEN KUANG-CHAO |
分类号 |
B24B7/22;B24D99/00;B24D3/34 |
主分类号 |
B24B7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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