| 发明名称 |
Method of forming a MEMS topped integrated circuit with a stress relief layer |
| 摘要 |
The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is reduced by forming a stress relief layer between the passivation layer and the MEMS devices.
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| 申请公布号 |
US8048704(B2) |
申请公布日期 |
2011.11.01 |
| 申请号 |
US20100750145 |
申请日期 |
2010.03.30 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
SMEYS PETER;JOHNSON PETER |
| 分类号 |
H01L33/12;H01L21/268;H01L29/82 |
主分类号 |
H01L33/12 |
| 代理机构 |
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