发明名称 SPACER FORMATION FILM, SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE
摘要 <p>A spacer formation film is adapted to be used for forming a spacer defining air-gap portions on a side of one surface of a semiconductor wafer and by being cut into a desired shape, the spacer formation film includes: a support base having a sheet-like shape; a spacer formation layer provided on the support base and having a bonding property, the spacer formation layer formed of a material containing an alkali soluble resin, a thermosetting resin and a photo polymerization initiator; and a cutting line along which the spacer formation film is to be cut, wherein the spacer formation layer is provided inside the cutting line so that a peripheral edge thereof is not overlapped to the cutting line.</p>
申请公布号 SG174368(A1) 申请公布日期 2011.10.28
申请号 SG20110065976 申请日期 2010.02.19
申请人 SUMITOMO BAKELITE COMPANY LIMITED 发明人 SHIRAISHI FUMIHIRO;KAWATA MASAKAZU;YONEYAMA MASAHIRO;TAKAHASHI TOYOSEI;DEJIMA HIROHISA;SATO TOSHIHIRO
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