METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
摘要
<p>A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.</p>
申请公布号
SG174500(A1)
申请公布日期
2011.10.28
申请号
SG20110068251
申请日期
2010.04.05
申请人
LAM RESEARCH CORPORATION
发明人
JI, BING;TAKESHITA, KENJI;BAILEY, ANDREW D., III;HUDSON, ERIC A.;MORAVEJ, MARYAM;SIRARD, STEPHEN M.;KO, JUNGMIN;LE, DANIEL;HEFTY, ROBERT C.;CHENG, YU;DELGADINO, GERATDO A.;YEN, BI-MING
