发明名称 |
METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON |
摘要 |
A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen. |
申请公布号 |
US2011262338(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US20090935093 |
申请日期 |
2009.03.31 |
申请人 |
SCHMID SILICON TECHNOLOGY GMBH |
发明人 |
SCHMID CHRISTIAN;PETRIK ADOLF;HAHN JOCHEM |
分类号 |
C01B33/021;B01J19/00 |
主分类号 |
C01B33/021 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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