SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND POWER SUPPLY DEVICE

摘要

Disclosed is a semiconductor device which comprises: a substrate (1); a first nitride semiconductor layer (5) that is formed above the substrate and has a nitrogen polar surface; a gate electrode (10) that is formed above the first nitride semiconductor layer; and a semiconductor layer (7) that is formed on the first nitride semiconductor layer only in a region below the gate electrode and exhibits polarization. Consequently, normally-off operation can be achieved.