METHOD FOR PREPARING A LAYER OF IN4SN3O12 AND ELECTRONIC DEVICE COMPRISING SUCH LAYER

摘要

The invention is directed to a method for preparing a layer of In4Sn3012, to a layer of In4Sn3O12 obtainable by said method, and to an electronic device comprising said layer. The method of the invention comprises - mixing a solution of In and Sn salts in an atomic ratio of In and Sn of about 4:3 with a complexing agent for In; and - applying the mixed solution onto a surface of a substrate, said surface having a temperature in the range of 250-400 °C, preferably in the range of 300-350 °C.