| 摘要 |
PROBLEM TO BE SOLVED: To provide a mesa pattern shape of a mesa section, which does not deviate from a mask pattern shape greatly.SOLUTION: While arranging a plurality of sides, which are the longest lengths of a mask pattern, in a direction parallel to a prescribed crystal orientation, side etching with an equivalent etching rate is performed on a compound semiconductor thin film located below the mask pattern by a wet etching method. Thus, the mesa section including the mesa pattern having upper/lower surfaces constituting a polygon corresponding to a shape of a polygon of the mask pattern is formed. |
