| 摘要 |
A silicon carbide layer is provided on a substrate, has a hexagonal single-crystal structure, and has a surface at which a depletion layer is formed. A protective film is insulative and provided on the silicon carbide layer to directly cover the surface. The surface thus directly covered with the protective film includes a portion having an off angle of not more than 10° relative to the {0-33-8} plane of the silicon carbide layer. This results in reduced leakage current flowing in an interface between the protective film and the semiconductor layer.
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