发明名称 |
FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS |
摘要 |
Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
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申请公布号 |
US2011263072(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US20100765407 |
申请日期 |
2010.04.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE WEN-CHIN;YEN WEN-TSAI;CHEN DING-YUAN;YU LIANG-SHENG;CHANG YU-HAN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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