发明名称 FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS
摘要 Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
申请公布号 US2011263072(A1) 申请公布日期 2011.10.27
申请号 US20100765407 申请日期 2010.04.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LEE WEN-CHIN;YEN WEN-TSAI;CHEN DING-YUAN;YU LIANG-SHENG;CHANG YU-HAN
分类号 H01L31/18 主分类号 H01L31/18
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