PRODUCTION METHOD FOR A BACK-SURFACE-FIELD TYPE OF HETEROJUNCTION SOLAR CELL

摘要

The present invention relates to a production method for a back-surface-field type of heterojunction solar cell wherein the photoelectric conversion efficiency of solar cells can be maximised by the grafting of a heterojunction type of solar cell and a back-surface-field type of solar cell without any requirement for separate masking work in the formation of a back-surface n-doping region and p-doping region. The production method for a back-surface-field type of heterojunction solar cell according to the present invention comprises the steps of: preparing a crystalline silicon substrate of a first conductivity type; and forming a junction region of the first conductivity type and a junction region of a second conductivity type, disposed alternately inside the back surface of the substrate.