| 摘要 |
PROBLEM TO BE SOLVED: To shorten a process cycle time by efficiently etching a channel part etc., of a semiconductor device.SOLUTION: An object 9 to be processed is continuously conveyed along a conveyance path 11 wherein the pressure is close to atmospheric pressure. An etchant is supplied from a supply nozzle 21 to the object 9 to be processed at an upstream-side position on the conveyance path 11 and a metal film 97 is wet etched. Successively, an etching gas containing a fluorine-based reaction component and an oxidative reaction component is brought into contact with a surface of the object 9 to be processed in a processing space 19 on a downstream side on the conveyance path 11 and a semiconductor film 94 is dry etched. The fluorine-based reaction component is generated with atmospheric-pressure plasma. In accordance with a conveying speed of the object 9 to be processed, the etching rate is set so that an etching depth in a period wherein the object 9 to be processed passes through the processing space 19 is substantially equal to a thickness of a film part 96 doped with an impurity. |
